| 2025-09-11 |
NXGWFUKDCT09072 |
SILICON VALLEY MICROELECTRONICS IN |
2353.0 kg |
381800.0
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2025-08-13 |
NXGWFUKDBP25493 |
SILICON VALLEY MICROELECTRONICS IN |
2490.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2025-07-12 |
NXGWFUKDAP71234 |
SILICON VALLEY MICROELECTRONICS IN |
2444.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2025-06-13 |
NXGWFUKCZR31484 |
SILICON VALLEY MICROELECTRONICS IN |
2405.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2025-05-16 |
NXGWFUKCYP96055 |
SILICON VALLEY MICROELECTRONICS IN |
2426.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2025-04-11 |
NXGWFUKCXR63940 |
SILICON VALLEY MICROELECTRONICS IN |
1833.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2025-03-18 |
NXGWFUKCWV53180 |
SILICON VALLEY MICROELECTRONICS IN |
1924.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2025-02-14 |
NXGWFUKCVT39166 |
SILICON VALLEY MICROELECTRONICS IN |
1309.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2025-01-14 |
NXGWFUKCTW46434 |
SILICON VALLEY MICROELECTRONICS IN |
2225.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2024-12-14 |
NXGWFUKCTA02542 |
SILICON VALLEY MICROELECTRONICS IN |
1309.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2024-10-28 |
NXGWFUKCRH05624 |
SILICON VALLEY MICROELECTRONICS IN |
1269.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |
| 2024-09-12 |
NXGWFUKCPC28163 |
SILICON VALLEY MICROELECTRONICS IN |
1300.0 kg |
381800
|
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELEC |